http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002170820-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2000-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d15ca2b469f4f800f2afcbd421e4857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cfbfdd9816d6131f0326502828c91f0a |
| publicationDate | 2002-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002170820-A |
| titleOfInvention | Method of manufacturing thin film transistor and plasma processing apparatus used therein |
| abstract | (57) Abstract: Provided is a method of manufacturing a thin film transistor for forming a gate insulating film of the thin film transistor under relatively low temperature conditions, and a plasma processing apparatus used for the method. SOLUTION: A heater stage 4 for mounting and heating a substrate 5 in a process chamber 1 is provided, and an exhaust port 2 is provided on a back surface thereof. An electrode 3 for supplying high-frequency power for plasma generation and a gas inlet 14 are provided at an upper portion in the process chamber 1. Between the electrode 3 and the heater stage 4, there is provided a plate 6 having a plurality of openings 19 whose opening ratio is changed according to the density distribution of the plasma generated by the electrode 3. . A dielectric member 7 such as quartz glass is fitted in the surface of the plate 6 in the opening 19 and its peripheral portion. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8895388-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003100646-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2004008519-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2004047157-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005268798-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I399839-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4673063-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007048968-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4703224-B2 |
| priorityDate | 2000-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.