http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002164344-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
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filingDate 2000-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28abfbbfa8bda5c835107bbdd236d78a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ded16103829d2b6c98089bae8fd2de90
publicationDate 2002-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002164344-A
titleOfInvention Method of forming ferroelectric thin film and ferroelectric thin film
abstract PROBLEM TO BE SOLVED: To provide a method for forming a ferroelectric thin film for forming a ferroelectric thin film having a bismuth-based layered perovskite structure at a low temperature. A method of forming a ferroelectric thin film according to the present invention includes a step of laminating an amorphous thin film on an underlayer, and a step of irradiating the amorphous thin film with an excimer laser beam to polycrystallize the ferroelectric thin film for a lower film. And a step of laminating an upper ferroelectric thin film 11 made of the same ferroelectric material as the lower ferroelectric thin film 10A on the lower ferroelectric thin film 10A. The lower ferroelectric thin film 10A and the upper ferroelectric thin film 11 constitute a ferroelectric thin film 12, and the upper ferroelectric thin film 11 is composed of the lower ferroelectric thin film 10A and the lower ferroelectric thin film 10A. The structure is such that when the same ferroelectric material is formed on the electrode 2, an amorphous film is formed under the temperature condition.
priorityDate 2000-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 24.