http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002164286-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2000-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50f4a7e0461cb645158ecc46ad2044f5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cdc77eda3e4022cb2afc4ba14a0e829d |
| publicationDate | 2002-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002164286-A |
| titleOfInvention | Method for manufacturing silicon single crystal substrate and silicon epitaxial wafer |
| abstract | [PROBLEMS] To provide a method for manufacturing a silicon single crystal substrate and a silicon epitaxial wafer, which can reduce the amount of moisture brought into a reactor. In addition, the present invention relates to at least 1000 ° C. to 1100 ° C. An object of the present invention is to suppress generation of moisture in a temperature range of ° C. SOLUTION: This is a silicon single crystal substrate having a CVD oxide film on a main back surface, and is subjected to a heat treatment under a temperature condition of 800 ° C. or more and less than 900 ° C., so that the concentration of water desorbed under the temperature condition becomes 0.1 ppm or less. Have been. C on main back 80 with respect to the silicon single crystal substrate on which the VD oxide film is formed By performing a heat treatment at a temperature condition of 0 ° C. or more and less than 900 ° C., a heat treatment step of reducing the concentration of water released from the silicon single crystal substrate to 0.1 ppm or less under the above temperature condition is performed. Next, a vapor phase growth step of forming a silicon epitaxial layer on the main surface of the silicon single crystal substrate by vapor phase growth is performed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007080958-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7842356-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007305730-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007032180-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012253376-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012142485-A |
| priorityDate | 2000-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.