http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002158232-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 2001-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a7fc2b448b8a126d9e370bdc27d1a1f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8de0748653091fffedac78962313eec0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34fd87b2b2796f9c2c5f8d02def61250 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_182a161b4149fc7ff715e1326ccbc735 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_084e49e17ed87ee9afea312fb3afb919 |
| publicationDate | 2002-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002158232-A |
| titleOfInvention | Hetero bipolar transistor |
| abstract | Abstract: PROBLEM TO BE SOLVED: To provide a hetero-bipolar transistor which suppresses a recombination current between an emitter and a base and has high characteristics such as a current multiplication factor while reducing a driving voltage using a SiGeC layer. . SOLUTION: An Si collector buried layer 11, a first base region 12 composed of a SiGeC layer having a high C content, and a SiGeC layer or Si having a low C content are provided on a Si substrate 10. A second base region 13 made of a Ge layer and an emitter region 1 4a and the Si cap layer 14 containing the Si cap layer 4a. Second At least at the end of the base region 13 on the emitter region side, the C content is less than 0.8%. This suppresses the formation of recombination centers due to C in the depletion layer at the emitter-base junction, thereby improving the electrical characteristics such as the current multiplication factor by reducing the recombination current while maintaining low-voltage drivability. Realize. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7119382-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101982731-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7358546-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6847063-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7084484-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6847062-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101995235-A |
| priorityDate | 2000-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.