| abstract |
(57) Abstract: A polymer compound comprising a repeating unit A represented by the following general formula (1) and a repeating unit B having an acid labile group. Embedded image (Wherein, R 1 to R 6 may be the same or different and each represents a hydrogen atom, a fluorine atom, a chlorine atom, or a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms or a fluorinated alkyl group) An alkyl group, at least one of R 1 to R 6 contains a fluorine atom, and a is in the range of 0 ≦ a ≦ 10.) The resist material of the present invention is sensitive to high energy rays, It is excellent in sensitivity, resolution and plasma etching resistance at a wavelength of 200 nm or less, particularly 170 nm or less. Therefore, the resist material of the present invention can be a resist material having low absorption at an exposure wavelength such as an F 2 excimer laser due to these characteristics, and can easily form a fine and perpendicular pattern to a substrate. Therefore, it is suitable as a fine pattern forming material for VLSI manufacturing. |