http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002151436-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b51116f0d4394aeebaa559708220357c http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1755eede76ea7e719a3e0d2843cd793 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate | 2000-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15a14410bec04aae58c06768666d1cbb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94b494c5871b454770833bdfd1a6c43e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8c6c1a9ccd1507709ec7c1fa71ebc00 |
| publicationDate | 2002-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002151436-A |
| titleOfInvention | Semiconductor device manufacturing method and apparatus |
| abstract | (57) Abstract: In manufacturing a metal thin film or a metal silicide film in a semiconductor device manufacturing process, a uniform plasma is continuously generated under a pressure near atmospheric pressure, and a substrate is treated with the plasma. And a method and apparatus for producing a high-quality thin film on a substrate. SOLUTION: In forming a metal thin film or a metal silicide thin film in a semiconductor device by a plasma CVD method, Under a pressure near the atmospheric pressure, a solid dielectric is provided on at least one of the opposing surfaces of the pair of electrodes facing each other, and a processing gas is introduced between the pair of electrodes to apply a pulsed electric field. The plasma to be contacted with the substrate, and A method and apparatus for manufacturing a semiconductor device, wherein the vicinity of a contact portion between the plasma and a substrate is maintained in at least one atmosphere selected from the group consisting of nitrogen, argon, helium, neon, and xenon. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008038246-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7923076-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015511989-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4603566-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017133108-A |
| priorityDate | 2000-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.