| abstract |
(57) Abstract: A polymer compound comprising a repeating unit represented by the following general formula (1). Embedded image (In the formula, R 1 is a single bond or an alkylene group, R 2 and R 3 are a hydrogen atom, a fluorine atom, an alkyl group, or a fluorinated alkyl group, and one or both of R 2 and R 3 R 4 is an acid labile group, R 5 is a hydrogen atom or an alkyl group, and may contain a heteroatom such as oxygen, nitrogen, sulfur, etc. X is a methylene group, It is an ethylene group, an oxygen atom or a sulfur atom. The resist material used in the pattern forming method of the present invention is sensitive to high energy rays and has excellent sensitivity, resolution and plasma etching resistance at a wavelength of 180 nm or less, particularly 160 nm or less. |