http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002134713-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-906 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-84 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2000-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f07735fee3aed3fe832516f91b61c09e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e60fb969b9ac97cc5f2e806a318afe5 |
| publicationDate | 2002-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002134713-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | PROBLEM TO BE SOLVED: To efficiently remove impurity products adhering to a semiconductor film while minimizing loss of, for example, hemispherical microcrystals formed in a semiconductor film containing impurities. Provided is a method for manufacturing a semiconductor device. SOLUTION: A spherical or hemispherical microcrystal 18 is formed on the surface of a phosphorus-containing amorphous silicon film constituting a lower electrode 17A of a capacitor. In order to suppress the depletion of the lower electrode 17A, annealing is performed in a PH 3 atmosphere to diffuse phosphorus into the microcrystals 18. In order to remove the impurity product 19 attached to the surface of the lower electrode 17A by this annealing process, a cleaning process using hot water (pure water) is performed. The natural oxide film formed on the surface of the lower electrode 17A is removed by a cleaning treatment using a mixed solution of hydrofluoric acid and water. The dielectric film 20 covers the surface of the lower electrode 17A. Then, a cylindrical capacitor is manufactured by sequentially forming the upper electrode 21. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006108624-A |
| priorityDate | 2000-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.