Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6fc8bbba7dbfdc1fe42f350fc84e17a3 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-317 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-39 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G29-00 |
filingDate |
2000-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a87bbaaa3dae91fd06c284639ed1e400 |
publicationDate |
2002-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2002121025-A |
titleOfInvention |
Precursor solution composition for forming lanthanum bismuth titanate |
abstract |
PROBLEM TO BE SOLVED: To provide a precursor solution composition for forming a thin film capable of forming a lanthanum bismuth titanate film exhibiting good ferroelectricity practically and inexpensively. A compound represented by the following general formulas (1) and (2) compound represented by: the NH 3-n (C 2 H 4 OH) n (1) ( wherein n is 2 or 3 NH 2 (C 2 H 4 NH) m H (2) (where m represents 2 or 3), and one or more compounds selected from the group consisting of bismuth compounds, titanium compounds, and lanthanum compounds And a precursor solution composition for forming lanthanum bismuth titanate, comprising: |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4649573-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004304193-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011142146-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004282089-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002265224-A |
priorityDate |
2000-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |