http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002118265-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2000-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38e2f2fbc148ada6b43ad2720dfcc5f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c27d73157a9b14734eb1b65dfd7866f |
| publicationDate | 2002-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002118265-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Problem] A metal element used to promote crystallization of a semiconductor film has been a cause of impairing stability and reliability of electric characteristics when a TFT is manufactured. A semiconductor film is crystallized using a metal element for promoting crystallization in the semiconductor film. When selectively adding an impurity element to the crystallized semiconductor film, It is performed at a low temperature of 200 ° C. or less. By adding the impurity element at a low temperature, an amorphous state can be formed with a small amount of the impurity element. Thereafter, when a heat treatment is performed, recovery of crystallinity and gettering can be performed efficiently. |
| priorityDate | 2000-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.