http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002118074-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate | 2000-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38e2f2fbc148ada6b43ad2720dfcc5f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c27d73157a9b14734eb1b65dfd7866f |
| publicationDate | 2002-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002118074-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Problem] Even when a semiconductor film to which an impurity element is added is subjected to heat treatment, crystallinity is not recovered, and the impurity element may not be efficiently activated. When an impurity element is added to a semiconductor film, 2 It should be performed at a low temperature of 00 ° C. or less. By adding the impurity element at a low temperature, an amorphous state can be formed with a small amount of the impurity element. After that, when heat treatment is performed, It is possible to efficiently recover the crystallinity and activate the impurity element. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013258421-A |
| priorityDate | 2000-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.