http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002117912-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-542 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M14-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 |
| filingDate | 2000-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b44dfc8ad57258b2bc9f8c6f3cbc27f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38ec8bbdb03ab250f48c3fa4211e6d2a |
| publicationDate | 2002-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002117912-A |
| titleOfInvention | Semiconductor electrode, method of manufacturing semiconductor electrode, and solar cell |
| abstract | [PROBLEMS] To provide a semiconductor electrode having excellent photoelectric conversion efficiency, a method for manufacturing a semiconductor electrode, and a solar cell. A solar cell according to the present invention includes a first substrate, A first electrode 3 provided on an upper surface of a first substrate 2; A semiconductor electrode 4 disposed on the upper surface of the electrode 3, a wall 5 surrounding the outer edge of the semiconductor electrode 4 and having a storage space 8 therein, and the semiconductor electrode 4 disposed facing the semiconductor electrode 4 via the wall 5. The second electrode 6 includes the second electrode 6, the second substrate 7 provided on the upper surface of the second electrode 6, and the electrolyte solution 81 stored in the storage space 8. The semiconductor electrode 4 is mainly composed of titanium oxide. This titanium oxide preferably contains rutile-type titanium dioxide. Further, the semiconductor electrode 4 preferably has a film shape, The band gap is preferably equal to or less than 3.1 eV. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/AU-2004307853-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007103310-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100380730-C http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015082549-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008115055-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010005213-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010005213-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005045984-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101733007-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011100676-A |
| priorityDate | 2000-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.