| abstract |
[PROBLEMS] To provide a method for forming a resist pattern for forming a fine patterned thin film, and a method for patterning a thin film using the same. SOLUTION: After a thin film to be milled 2 is formed on a substrate 1, a polymethyl glutarimide layer 3 and a positive type photoresist layer 4 are applied and formed. After that, the photoresist layer 4 is exposed and developed through the mask 5 to form a pre-resist pattern 6. Next, the pre-resist pattern 6 is subjected to an ashing process to obtain a narrowed resist pattern 7. Next, milling is performed on the thin film 2 to be milled using the resist pattern 7 as a mask, A patterned thin film 9 is obtained. |