http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002116544-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03d0f52bb4069f8a19d70dcfb697c67a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F232-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2000-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abf92c6162f276a54a5782dd87f205c1 |
| publicationDate | 2002-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002116544-A |
| titleOfInvention | Positive photoresist composition |
| abstract | (57) Abstract: In the manufacture of a semiconductor device, the occurrence of development defects is small, the adhesion on an inorganic antireflection film is excellent, and the exposure margin (particularly, the exposure margin of an isolated line) is improved. To provide a positive photoresist composition which is excellent in sensitivity variation with time and the like. (A) A resin containing a repeating structural unit having norbornene, a repeating structural unit containing a specific alicyclic hydrocarbon structure, and having a dissolution rate in an alkali developing solution increased by the action of an acid; and (B) A positive photoresist composition comprising a compound that generates an acid upon irradiation with actinic rays or radiation. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010197849-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010197850-A |
| priorityDate | 2000-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 332.