http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002111125-A

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filingDate 2000-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d4acbd9a66c69f7c16db5a125dffbd2
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publicationDate 2002-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002111125-A
titleOfInvention Distributed feedback semiconductor laser
abstract (57) [Summary] The present invention provides a structure of a gain-coupled DFB laser capable of further improving the stability of single mode oscillation and further increasing the threshold current. With the goal. A DFB laser according to the present invention has an active layer having a periodic uneven shape and a film thickness periodically fluctuating, and is provided in a concave region of the active layer, and narrows a current to form the active layer. And a current block layer for selectively leading to the convex region. With this structure, according to the present invention, the thickness of the active layer has a periodic fluctuation in the light waveguide direction, and most of the current injected from the outside is converted into a thick region (convex) of the active layer. Region) can be selectively implanted. Therefore, the ratio of the gain coupling component to the refractive index coupling component can be made larger than before, and the threshold current can be made lower than before.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013214648-A
priorityDate 2000-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 24.