| abstract |
(57) [Summary] [PROBLEMS] To solve the problem of performance improvement technology in microfabrication of a semiconductor element using an electron beam or X-ray, and to provide sensitivity, resolution, resist for use of an electron beam or X-ray. Compatible with next-generation EB irradiators (EB block irradiators or EB steppers (sequential reduction projection irradiators) aiming at higher throughput) with high acceleration voltage that satisfies the shape characteristics and is also suited to mass production of semiconductor devices. To provide a positive resist composition for electron beam or X-ray exhibiting high sensitivity. (A) A positive resist composition for an electron beam or X-ray, comprising a resin containing a repeating unit having an N-oxyimidosulfonyl group having a specific structure as a component. |