| abstract |
[PROBLEMS] To provide a high-purity ruthenium sputtering target having no internal defects without increasing the size of a smelting apparatus and ancillary equipment and complicating the operation, and a method for manufacturing the same. provide. SOLUTION: A ruthenium raw material is supplied at a furnace pressure of 10 Torr. r to 2 atm (1.33 × 10 3 Pa to 2 × 10 5 Pa), and by melting with a thermal plasma in which hydrogen is added to a plasma working gas, any of alkali metal elements such as sodium and potassium can be used. The content is also 0.1 wt ppm or less, the content of any of the alkaline earth metal elements such as magnesium and calcium is 0.1 wt ppm or less, and the content of any of the transition metal elements excluding the platinum group element is also low. 0. 1 ppm by weight or less, and any content of radioisotopes such as uranium and thorium is 1 ppm by weight or less, A high-purity ruthenium sputtering target free from internal defects and having a total content of gas component elements of 30 ppm by weight or less can be obtained. The purity of ruthenium is 99. It is preferably at least 995% by weight. The impurities may include platinum group elements such as Rh, Pd, Os, Ir, and Pt. |