http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002100570-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3fb751fc1583ed35203425a4bd16589f
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
filingDate 2000-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_397917abbe689e6a30cae229bafaff0e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9c2d581b48224383360daba1b604a63
publicationDate 2002-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002100570-A
titleOfInvention Single wafer type vapor phase epitaxy
abstract PROBLEM TO BE SOLVED: To suppress deposition and adhesion of impurities on a wafer inside a single wafer type vapor phase epitaxy apparatus and to stabilize the flow of a source gas so as to obtain favorable conditions. Provided is an apparatus capable of forming a film under the same. SOLUTION: In a single wafer type vapor phase epitaxy apparatus, a loading chamber 33 for loading a wafer is provided separately from a reaction chamber 31 for performing vapor phase growth, and a transfer machine for transporting a wafer from the loading chamber 33 to the reaction chamber 31. By providing a room 19 for carrying out vapor phase growth and a room for carrying in a wafer separately, the deposition and adhesion of impurities to the wafer can be suppressed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010272889-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022028732-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011077641-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007294545-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011134871-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016051864-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170342-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007258516-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111211074-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111211074-A
priorityDate 2000-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 32.