| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2001-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74e3e381258779bb9a3970d52b4f4713
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_071b4bd4fe3b2c90c0b6c27183f01bb6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d097fa638962b18b89c2fba20a2ef68f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2a1db39b057a5f7154f06343655897b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_562dbb21f59af7391609eef13a0937e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee0ddccb0d9673d51abe7ccf0cc4f1ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_896132a9b7bc95fc32fbb59ca9848661 |
| publicationDate |
2002-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002094076-A |
| titleOfInvention |
Thin film transistor and semiconductor device |
| abstract |
[PROBLEMS] To improve the orientation of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film and to provide a TFT using such a crystalline semiconductor film. SOLUTION: A metal element is added to an amorphous semiconductor film containing silicon as a main component and having a germanium content of 0.1 at% or more and 10 at% or less, and a heat treatment is performed to crystallize the film. The ratio of the angle between the {101} lattice plane and the surface of the semiconductor film detected by the electron diffraction pattern method within 10 degrees is 20% or more and the {001} lattice plane is the surface of the semiconductor film. The channel forming region is formed of a semiconductor film in which the ratio of the angle within 10 degrees is 3% or less and the ratio of the angle of the {111} lattice plane with the surface of the semiconductor film within 10 degrees is 5% or less. The formed TFT is provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4690326-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007507109-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101132603-B1 |
| priorityDate |
2000-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |