http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002093923-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2001-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_518e7624c4810577013319e28e1caa1e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a3c18251ac2ce4f24285f37ebfd1562 |
| publicationDate | 2002-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002093923-A |
| titleOfInvention | Semiconductor device and method of manufacturing the same |
| abstract | (57) Abstract: Provided is a semiconductor device including a CMOS element having high reliability without avoiding deterioration or destruction of a gate oxide film while avoiding a reduction in the thickness of a gate electrode, and a method for manufacturing the same. A semiconductor device including a CMOS element, wherein the CMOS element is formed on a silicon substrate, and an n-type source / drain region is formed on the silicon substrate. 2, 44, an n-channel MOS device 200 including a gate oxide film 32 and a gate electrode 34; 0 and p-type source / drain regions 22 and 2 4. p-channel MOS device 100 including gate oxide film 12 and gate electrode 14, gate electrode 34 of n-channel MOS device 200 and p-channel MOS device 100 Wiring layer 5 electrically connecting to gate electrode 14 0. At least one of the conductive layers of the gate electrodes 14, 34 and the gate wiring layer 50 includes metal silicide layers 14b, 34b, and a group III dopant and V At least one impurity of the group III dopant is not present at a concentration higher than 3 × 10 20 cm −3 . |
| priorityDate | 1992-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 63.