| abstract |
(57) [Summary] (with correction) [PROBLEMS] To provide a technique capable of efficiently forming a uniform lanthanide-based film. A lanthanide-based thin film is formed by a chemical vapor deposition method using a compound represented by R 1 R 2 R 3 Ln. [However, R 1 , R 2 , and R 3 are groups selected from the group consisting of an alkyl group, a group of a silicon-based compound, and an amino group, and even if R 1 , R 2, and R 3 are different from each other, May be the same. Ln is a lanthanide element. A film formed using this compound can be applied to ULSI. |