| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1010e3862914acdd087e73d76911ec6d |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
| filingDate |
2000-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbe2dcb7f2f4298fe39b72e121c4ecd1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b79a34ff23fe0c5add96853d4926eee0 |
| publicationDate |
2002-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002076353-A |
| titleOfInvention |
Semiconductor device and method of manufacturing the same |
| abstract |
(57) [Problem] To provide a field effect transistor (Schottky barrier type) using a Schottky tunnel junction useful for ULSI In the manufacture of MOS FETs), the metal and metal oxide of the gate electrode and gate insulating film are prevented from deteriorating due to high-temperature processes. SOLUTION: In manufacturing a Schottky barrier MOS FET, a damascene gate process for forming a gate electrode and a gate insulating film after forming a source / drain structure is applied to the Schottky barrier MOS FET. The gate electrode and the gate insulating film are not subjected to a high-temperature heat treatment, so that a metal and a metal oxide included in the gate electrode and the gate insulating film are prevented from being deteriorated. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100393966-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7981735-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8492261-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010176421-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007158294-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016149546-A |
| priorityDate |
2000-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |