http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002076083-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J3-28
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filingDate 2001-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_223b8fb22ce88acdf8b434010c52776f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_daf51f206fc82e5c5406c4d2035aaa79
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publicationDate 2002-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002076083-A
titleOfInvention Structure evaluation method, semiconductor device manufacturing method, and recording medium
abstract [PROBLEMS] To provide a structure evaluation method, a semiconductor device manufacturing method, and a recording medium with high evaluation accuracy using an optical evaluation method. SOLUTION: An initial estimated value of a process condition is set, a structure of a semiconductor device element is estimated by a process simulator, and then an estimated value of a physical quantity measured value is calculated. Then, by comparing the measured value and the theoretically calculated value of the physical quantity of the element of the semiconductor device by the optical evaluation method with each other, For example, a probable structure of the measured element of the semiconductor device is obtained by using a rapid descent method. Using this result, it is also possible to correct the process conditions in the process for other semiconductor device elements.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009076920-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004510152-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007510312-A
priorityDate 2000-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 35.