| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3cfa11ef6f0c5577b4612b415ff30253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_450febcfaba5b85b90f576bb462db0c6 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4584
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458 |
| filingDate |
2000-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2085ef1053f1a5fb432d0c96336f3c89
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21ac41e6d3c4f940247709262d6cce3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19513b1bff7390b7f8d7ffe26ad0c2bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b251972b5f407baed81540fd9e5f8cf4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fec36c604e994fc1923aed9139d49201 |
| publicationDate |
2002-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002075875-A |
| titleOfInvention |
Method for chemical vapor deposition of silicon semiconductor substrate |
| abstract |
[PROBLEMS] To provide a chemistry capable of lowering the film forming temperature, suppressing the occurrence of slip dislocation in a silicon semiconductor substrate, and obtaining a thin film having a quality equal to or better than a conventional thin film. Abstract: Provided is a vapor phase thin film growth method. SOLUTION: A chemical vapor phase thin film is formed by forming a thin film on a silicon semiconductor substrate surface by using a rotary vapor phase thin film growth apparatus for supplying a raw material gas from above to a rotating silicon semiconductor substrate surface. In the method, monosilane gas is used as an active ingredient of a source gas for forming the thin film, and under a reduced pressure of 2.7 × 10 2 to 6.7 × 10 3 Pa, And the number of rotations of the silicon semiconductor substrate is 500 to 200. The thin film growth reaction is performed at 0 min -1 and at a reaction temperature of 600 to 800 ° C. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015204325-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009059934-A |
| priorityDate |
2000-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |