http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002071752-A

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filingDate 2001-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2002-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002071752-A
titleOfInvention Method of testing semiconductor device, test substrate thereof, and method of manufacturing test substrate
abstract (57) [Summary] [PROBLEMS] To simplify a test process and reduce a test cost. SOLUTION: A burn-in test of a semiconductor element 3 is performed in a state where a protruding electrode 12 of a test substrate 10 and an electric connection electrode 3a of the semiconductor element 3 are joined by heating and pressurizing. When the element 3 is peeled off from the test substrate 10, the protruding electrode 12 is peeled off from the test substrate 10 along with the semiconductor element 3, and the protruding electrode 12 is formed on the semiconductor element 3. The formation of the protruding electrodes 12 on the element 3 is performed simultaneously.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101188975-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007534947-A
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Total number of triples: 26.