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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J19-08
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filingDate 2000-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fea1b5c8d98003eaa42c20cd3e9b6a8
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publicationDate 2002-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002069635-A
titleOfInvention Plasma generating apparatus, dense hard thin film forming apparatus using the same, and hard thin film forming method
abstract (57) [Problem] To prevent a reduction in RF power absorption efficiency, SP3 Provided is a method and an apparatus capable of forming a dense and hard film such as a BN film containing a large number of structures. A plasma generating chamber is provided adjacent to a film forming chamber in which a substrate can be placed in a high vacuum state, and a high frequency antenna for plasma generation and a dense hard thin film are formed inside the plasma generating chamber. A target of a material is arranged, a high-density plasma is generated, and atoms of the target material sputtered from the target are introduced into the substrate in an ionized state.
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