| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-56 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3162 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 |
| filingDate |
2001-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f9b7b4fb9c2652375ed99ecfeffc787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c65efd6c05edaffc076a77f0dd7ed4b |
| publicationDate |
2002-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002064153-A |
| titleOfInvention |
Semiconductor device capacitor manufacturing method |
| abstract |
The present invention relates to a method for manufacturing a capacitor of a semiconductor memory device, and provides a method for manufacturing a capacitor for forming a dielectric film having a double film structure of a TaON thin film and an Al 2 O 3 film. SOLUTION: A lower electrode is formed by a polysilicon film, a thin nitride film is formed on the lower electrode, and an amorphous TaO film is formed on the nitride film. Depositing an N thin film; Increasing the nitride content in the thin film by performing an RTP process on the N thin film; and forming Al 2 O on the TaON thin film. Depositing three films to form a dielectric film having a double film structure, removing impurities in the dielectric film, crystallization and Ta. Performing a furnace vacuum heat treatment to prevent loss of nitride in the ON thin film; and depositing a polysilicon film on the Al 2 O 3 film to form an upper electrode. Production method. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100947064-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017092275-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100500940-B1 |
| priorityDate |
2000-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |