http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002064063-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03d0f52bb4069f8a19d70dcfb697c67a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate | 2000-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cc6ae292dc30a467a8cb8ef0ae8972d |
| publicationDate | 2002-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002064063-A |
| titleOfInvention | Semiconductor element substrate, method of manufacturing the same, and semiconductor element |
| abstract | (57) [Problem] To reduce the defect density in a semiconductor element substrate. SOLUTION: The temperature is 5 on a (0001) plane 6H-SiC substrate 11. At 00 ° C., an AlN buffer layer 12 is formed with a thickness of about 20 nm. Subsequently, the temperature is raised to 1050 ° C., the GaN layer 13a is grown to about 3 μm, the growth is interrupted, and tetraethylsilane is irradiated for a certain period of time, and then the GaN layer 13b is grown. After that, an SiO 2 film 14 is formed, and after applying a resist, the width is set at intervals of about 30 μm. The 5 μm SiO 2 film 14 is left. Using the resist and the SiO 2 film 14 as a mask, the GaN layers 13a, 13b and the Al The N buffer layer 12 is removed to the substrate by dry etching to form a line and space pattern. After removing the resist and the SiO 2 film 14, a GaN layer 15 is selectively grown to about 5 μm. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102574745-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040022114-A |
| priorityDate | 2000-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.