| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| filingDate |
2001-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6870005105a943a17b643445db71cc13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f242527409fe6bedf2a415a5b2da6ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af2c0b25ffe8002bb200cbdd12f9cff7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b601881c88e7a418a448c020e4c2fde |
| publicationDate |
2002-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002057224-A |
| titleOfInvention |
Semiconductor device capacitor manufacturing method |
| abstract |
(57) Abstract: The present invention discloses a method for manufacturing a capacitor of a semiconductor memory device, which can prevent a leakage current while increasing a charge storage capacity. The present invention includes the steps of: depositing a cap oxide film on a semiconductor substrate; patterning the cap oxide film so that a capacitor region of the substrate is exposed; Continuously depositing a ruthenium film for the lower electrode by in-situ LPCVD and PECVD; removing the cap oxide film after the chemical mechanical polishing of the ruthenium film to form a cylinder-shaped lower electrode; Depositing an amorphous TaON thin film having an excellent dielectric constant on the lower electrode; crystallizing the amorphous TaON thin film through a thermal process; and forming an upper electrode on the crystallized TaON thin film. The method includes depositing a metal film. |
| priorityDate |
2000-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |