| abstract |
(57) Abstract: Provided is a semiconductor device having a void formed between wiring layers and a method for manufacturing the same. A method for manufacturing a semiconductor device includes the following steps (a) and (b). (A) a step of forming a base insulating layer 30 on the wiring layer 20 having a predetermined pattern, and (b) a step of forming an interlayer insulating layer 40 on the base insulating layer 30, wherein the adjacent wiring Between the layers 20, A gap 50 defined by the base insulating layer 30 and the interlayer insulating layer 40 is formed, and in the base insulating layer 30 in the step (a), the base insulating layer 30 in the formation region of the gap 50 is formed. Has a property of repelling the material of the interlayer insulating layer 40 as compared with the base insulating layer 30 in other regions. |