| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2001-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_835a2d41c113a9d504661db4999493c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a39080a9402778738a66c232e23f20a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69b06228e0517c5c483adc264cc40800
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ece959de5784e12010e6864b6cb4466c |
| publicationDate |
2002-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002050638-A |
| titleOfInvention |
Method of forming fully self-aligned TFT with improved process window |
| abstract |
(57) [Problem] To provide a method of opening a resist in a raised region of a semiconductor device. The method includes forming a conductive layer on a channel insulating layer and forming a raised portion above a substantially planar peripheral region. A photoresist layer is formed on the raised portion and the surrounding area, and after developing the photoresist, the photoresist remains on the upper surface of the raised portion, A pattern is formed in the photoresist by reducing the amount of exposure to the photoresist on the conductive layer on portions raised by the grayscale photomask so that it does not remain in the surrounding area. The conductive layer is etched according to the photoresist to form source / drain electrodes that are self-aligned with the channel insulating layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101016441-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011008118-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100616708-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011075656-A |
| priorityDate |
2000-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |