http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002043615-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f4a8faea375370b67c9d71e67db32bcd |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04 |
| filingDate | 2000-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6b3fe67b88c15a7198157ac2594ed8d |
| publicationDate | 2002-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002043615-A |
| titleOfInvention | LED array |
| abstract | (57) [Summary] [PROBLEMS] To reduce the overall film thickness, shorten the film formation time, reduce the consumption of raw materials, increase the productivity, and reduce the manufacturing cost. A buffer layer and a one-conductivity-type semiconductor layer (an ohmic contact layer, a single-layer strained layer or strained superlattice layer, and a cladding layer (electron injection layer), c) are provided on a substrate. I do. The thermal cycle for reducing the dislocation density is performed during or after the formation of the ohmic contact layer 3a, whereby the thermal cycle treatment is performed on at least a part of the layer region of the ohmic contact layer 3a. |
| priorityDate | 2000-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.