| abstract |
(57) [Problem] To provide a method of forming a crystalline semiconductor thin film having small carrier mobility variation. A light-shielding film is formed on an amorphous silicon film on a glass substrate. Then, the amorphous silicon film 12 is irradiated with the laser by the scan annealing method while the end portion in the length direction of the linearly shaped laser light in the length direction is shielded by the light shielding film 15 to change the amorphous silicon into polysilicon. Thereafter, the light-shielding film 15 is removed, and the amorphous silicon film 13 in a portion covered by the light-shielding film 15 is irradiated with laser light to change the amorphous silicon into polysilicon. |