http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002037662-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1010e3862914acdd087e73d76911ec6d |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01Q17-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F1-34 |
| filingDate | 2000-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdc3f604dada9df3f5b4a8c04b880f0d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd1448d0709ce18980f1a246482a9336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d42fe1ce2e4ebaed889bd87bcfa5790a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db3b1868d2ba5b054abd2bd12b47d8b1 |
| publicationDate | 2002-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002037662-A |
| titleOfInvention | Quasi-structure SiC-ferrite ceramics composite electromagnetic wave absorber |
| abstract | (57) [Summary] (Modified) [Problem] 1 to 20 GHz excellent in fire resistance and durability Develop an effective electromagnetic wave absorber in the band using new materials. SOLUTION: A quasi-structure SiC-ferrite ceramic composite type electromagnetic wave absorber comprising a spinel ferrite sintered material containing quasi-structure SiC and having a matching frequency with respect to electromagnetic waves between 100 MHz and 10 GHz. body. After infusibilizing the polycarbosilane, the weight ratio of the spinel ferrite powder to the spinel ferrite powder is 5 to 30. % Or a mixture of 3-10% by weight of polycarbosilane with respect to the spinel ferrite powder dissolved in a solvent is mixed with the spinel ferrite powder, and the mixture after volatilizing the solvent is infusibilized. After the pressure molding of the mixed powder, sintering is performed at 900 to 1200 ° C. in a non-oxidizing atmosphere, and then sintering is performed at 900 to 1200 ° C. in an oxidizing atmosphere to form a quasi-structure SiC in the sintered material by two-stage heating. I do. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113185299-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112456562-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112456562-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113279089-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004089054-A1 |
| priorityDate | 2000-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291 |
Total number of triples: 24.