http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002033547-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| filingDate | 2000-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c89fb203f3269b94eddb503a9fbec5ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70a4cb34768bdf13eada5c1714bee32e |
| publicationDate | 2002-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002033547-A |
| titleOfInvention | Semiconductor integrated optical device |
| abstract | (57) Abstract: Provided is a low-cost semiconductor integrated optical device capable of transmitting a desired wavelength with high accuracy over a wide range of oscillation wavelengths. A region through which ions pass and a region through which ions do not pass when an ion implantation process is used are provided in a stripe shape on an upper portion of a strained multiple quantum well structure including a strained quantum well layer and a barrier layer. A semiconductor integrated optical device in which ions are implanted into a quantum well structure and then annealed, and a region through which ions do not pass is used as an optical waveguide. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8841143-B2 |
| priorityDate | 2000-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.