http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002033385-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2000-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18fd4afad74f2c72cbaf074b3b6f2586 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ac9f31a1ba96e9250536ecaf063f648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7592b7496045a39432f559e9525510a8 |
| publicationDate | 2002-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002033385-A |
| titleOfInvention | Semiconductor device manufacturing method and semiconductor device evaluation method |
| abstract | PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device and an evaluation method for a semiconductor device in which the adhesion between a metal wiring such as Cu and a Cu diffusion preventing film such as a SiN film and a SiC film formed by CVD is improved. I will provide a. SOLUTION: An insulating film 1 is formed on a semiconductor substrate, a wiring groove 7 is formed in the insulating film 1, a metal wiring 8 is buried in the wiring groove 7, and a surface treatment of the metal wiring 8 is performed to form a modified layer 5. A CVD film (SiN) 6 is formed on the insulating film 1 and the metal wiring 8. Is formed, and the adhesion of the CVD film to the metal wiring is improved by the surface treatment. The surface treatment is performed using ion water, aqueous hydrogen peroxide, persulfuric acid, alkalis, or the like. By giving the reaction selectivity in the initial stage of CVD by this surface treatment, the adhesion between the Cu wiring and the CVD film can be improved without increasing the resistance or causing a leak between the wirings. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6903015-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004061931-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100399520-C http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7416985-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007311383-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7727891-B2 |
| priorityDate | 2000-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.