| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate |
2001-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f242527409fe6bedf2a415a5b2da6ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_509522420bb2eca9dfd9c7c4eb74a820
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6870005105a943a17b643445db71cc13 |
| publicationDate |
2002-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002026273-A |
| titleOfInvention |
Semiconductor device capacitor manufacturing method |
| abstract |
[PROBLEMS] To provide a method of manufacturing a capacitor of a semiconductor device, which can improve surface roughness and improve electrical characteristics of a capacitor when a Ru film is formed as a lower electrode. SOLUTION: The method for manufacturing a capacitor of a semiconductor device according to the present invention comprises the steps of: forming a first capacitor on a semiconductor substrate on which a predetermined structure is formed; Depositing a Ru film, exciting a mixed plasma of Ar and H 2 to treat the first Ru film, and depositing a second Ru film on the first Ru film to form a second deposited R film. forming a lower electrode by patterning after forming a u film, forming a Ta 2 O 5 film on the entire structure, Forming a TiN film on the entire structure and then patterning to form an upper electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7655574-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100875647-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7303973-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8021987-B2 |
| priorityDate |
2000-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |