http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002016137-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate | 2001-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d68e5e96f36883f354bdf7610ff9025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70d71a5dcb0e8ea6a7b1d6d54338218f |
| publicationDate | 2002-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002016137-A |
| titleOfInvention | Method for forming copper metal wiring of semiconductor device |
| abstract | (57) [Summary] (Problem corrected) [PROBLEMS] When a copper metal wiring is formed by using the CECVD method, a plasma treatment is performed after the deposition of a chemical reinforcing agent, so that the surface of the diffusion barrier layer is coated with the chemical reinforcing agent. Provided is a method for forming a copper metal wiring of a semiconductor element, which can maximize an adsorption site and thereby improve copper burying characteristics. A method of forming a copper metal wiring of a semiconductor device according to the present invention includes the steps of: forming an interlayer insulating film on a substrate having a lower structure, forming a damascene pattern, and then performing a cleaning step; Forming a diffusion barrier layer on the formed overall structure, performing a plasma treatment on the entire structure provided with the diffusion barrier layer, and chemically removing the diffusion barrier layer on the plasma-treated diffusion barrier layer. Performing a chemical pretreatment using a reinforcing agent, depositing copper on the entire structure so that the damascene pattern is embedded, and performing a chemical mechanical process so that an upper surface of the interlayer insulating film is exposed. Performing a selective polishing process to leave copper metal wiring only in the damascene pattern. |
| priorityDate | 2000-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.