| abstract |
(57) [Summary]nThe method of chemical vapor deposition of a coated tungsten thin film on titanium nitride proceeds by hydrogen reducing tungsten hexafluoride at a temperature between 200C and 500C. Preferably, the tungsten film nucleation is facilitated by subjecting the titanium nitride surface of the substrate to a plasma treatment, preferably with hydrogen plasma. The plasma treatment may be performed in a separate etching chamber and transferred to the tungsten CVD chamber without intermediate exposure to air, or preferably, a susceptor in the chamber of the tungsten CVD reactor where the tungsten film is to be applied. It may be performed by low energy etching performed by attaching a substrate to the substrate. |