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filingDate 1997-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2001-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001515656-A
titleOfInvention Semiconductor laser and method of manufacturing the same
abstract (57) [Summary] Self-oscillating diode lasers usually have a so-called saturable absorber. Absorbing the generated radiation increases the starting current and reduces efficiency. The diode laser according to the present invention self-oscillates by forming a special coating layer (20) on the end face (51) of the laser without increasing the starting current or reducing the efficiency. The coating layer (20) comprises a first mirror (21), an intermediate layer (22) having an optical thickness at least approximately equal to an integer multiple of half the wavelength of the generated electromagnetic radiation, and a second mirror (23). ), The coating layer (20) is made of only a material having a band gap larger than the band gap corresponding to the wavelength of the generated electromagnetic radiation, and the reflectance of the mirrors (21, 23) and the optical thickness of the intermediate layer are provided. The deviation from an integral multiple of half the wavelength of the generated electromagnetic radiation is preferably substantially minimized so that group velocity dispersion (GVD) is negative at wavelengths adjacent to the wavelength of the generated electromagnetic radiation. To choose. The pulses are generated by automatic mode locking and do not cause pulse width broadening due to sufficiently negative group velocity dispersion. As a result, the laser according to the present invention stably oscillates.
priorityDate 1996-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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