http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001505369-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2033-0095 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2648 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N33-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00 |
| filingDate | 1998-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001505369-A |
| titleOfInvention | Method and apparatus for detecting characteristics of sample made of semiconductor material |
| abstract | Abstract: A method and apparatus for determining a doping concentration profile of a sample of a semiconductor material is provided. The sample is placed between a pair of electrodes, on one electrode, and separated from the other electrode by a non-conductive medium. In one implementation of the invention, the non-conductive medium is air. An area on the surface of the sample is illuminated with a beam of light that is shorter in wavelength than the wavelength corresponding to the energy gap of the semiconductor material and that is intensity modulated at a predetermined frequency. A variable DC bias voltage is applied between the pair of electrodes, with the variable DC bias voltage varying between a voltage corresponding to sample integration and a voltage corresponding to deep depletion. The less the inversion layer is formed on the surface of the sample, the lower the brightness of the light beam and the faster the DC bias voltage fluctuates. During the sweep of the DC bias voltage, a signal corresponding to the total capacitance between the two electrodes is provided. A signal is provided that is representative of an alternating photocurrent induced in a region of the sample that is exposed to the light beam. The brightness and modulation frequency of the light beam are selected such that the alternating current is approximately proportional to the brightness of the light beam. Then, the doping concentration profile is determined using the AC photocurrent, the total capacitance, and the DC bias voltage. The apparatus includes a sensor assembly having a sensor chip mounted on an air bearing assembly. The air bearing assembly is suspended from the housing by a pair of bellows. In use, air is supplied to the air bearing assembly through the bellows, causing the bellows to expand and lower the sensor chip until the expansion stops under the action of the air bearing. In another implementation of the invention, no photocurrent or photovoltage is used, and the doping concentration profile provides information on total capacitance, air capacitance, DC bias voltage, and area of the electrode remote from the sample. Is determined from |
| priorityDate | 1997-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.