| abstract |
(57) [Summary] An electrode formed on a semiconductor chip (2) and a bump (3) formed of a low-melting metal ball having a predetermined size and formed in a spherical shape and adhesively bonded to these electrodes (5). A semiconductor device including (1). The electrode (5) is made of Cu or a Cu alloy, Al or an Al alloy, or Au or an Au alloy. When the electrode material is composed of Al or an Al alloy, the electrode is formed on a layer of the Al or Al alloy electrode material by using a metal or metal alloy (preferably Ti, W, Ni, At least one layer (6) made of a metal selected from Cr, Au, Pd, Cu, Pt, Ag, Sn or Pb, or an alloy of these metals) is included. The low melting metal ball (3) is adhesively bonded to the electrode (5), preferably using a flux. The low melting metal balls (3) adhesively bonded to the respective electrodes (3) may be reflowed into hemispherical bumps before use. |