| abstract |
(57) [Summary] A precursor solution (64) containing silicon in a xylene solvent is prepared, the substrates (5, 71) are arranged in a vacuum evaporation chamber (2), and the precursor solution is mist-formed. (66) is poured into a deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of precursor liquid on the substrate. The liquid is dried, fired, and annealed to form a silicon dioxide or silicon glass thin film (1224, 77) on the substrate. Thereafter, the integrated circuit (100) is completed and includes at least a portion of silicon dioxide or silicon glass as an insulator (77) for an electronic device (76) in the integrated circuit. |