http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001352042-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 2000-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001352042-A |
| abstract | PROBLEM TO BE SOLVED: To provide a semiconductor device provided with an isolation insulating film having a PTI structure, in which a floating effect on a substrate is suppressed, an isolation characteristic and a breakdown voltage are improved, and a method of manufacturing the same. It is. SOLUTION: A silicon nitride film is formed between interlayer insulating films covering an upper surface of an element formed on a surface of a semiconductor layer. |
| priorityDate | 2000-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Total number of triples: 6.