| abstract |
(57) [PROBLEMS] To completely eliminate the dependence of the underlayer on the film formation on the film formation surface by an extremely simple method without using additional energy such as plasma irradiation, high-temperature heating, and vacuum processing. Provided is a method for modifying a film-forming surface which can be erased at high speed, and a method for manufacturing a semiconductor device using the modified method. A gas or aqueous solution containing ammonia, hydrazine, an amine, an amino compound, or a derivative thereof is formed on a film formation surface 12a before forming an insulating film 15 on the film formation surface 12a of a film formation substrate 102. And then contacting a gas or aqueous solution containing hydrogen peroxide, ozone, oxygen, nitric acid, sulfuric acid, or a derivative thereof to the film formation surface 12a. |