http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001345042-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-02 |
| filingDate | 2000-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2cf442681baac559f06bc5b7ecc1557 |
| publicationDate | 2001-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001345042-A |
| titleOfInvention | Method of manufacturing cold cathode field emission device and method of manufacturing cold cathode field emission display |
| abstract | (57) [Summary] In a method for manufacturing a cold cathode field emission device, Without going through the complicated process as left, many fine and Provided is a method capable of reliably forming a uniform opening. A method of manufacturing a cold cathode field emission device includes forming a first resist layer, a protective film, and a second resist layer in which particles are dispersed on an insulating layer and a gate electrode forming layer. After forming sequentially, the second resist layer 32 Is selectively removed to remove the second resist layer 3 under the particles 33. 2 and then, after removing the exposed protective film 31, The particles 33, the second resist 32 layer and the protective film 31 are removed, and further, the particles 33, the first resist layer 30 located below the second resist layer 32 and the protective film 31 are removed. And etching the gate electrode constituent layer using the remaining first resist layer 31 as an etching mask. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007287403-A |
| priorityDate | 2000-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.