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filingDate 2000-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2783e49d2cdc0691fc0f52fcc953bda9
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publicationDate 2001-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001338991-A
titleOfInvention Semiconductor device
abstract (57) Abstract: Provided is a semiconductor device having a plurality of basic units including a memory cell and a logic cell on a same semiconductor substrate, which is easy to manufacture and can be highly integrated. A semiconductor device is formed on a semiconductor substrate and has a plurality of identical or symmetrical unit structures including a memory element and a logic element. A DRAM cell formed in the active region, and a series connection transistor for a logic element having source / drain regions formed in the second active region and having second and third gate electrodes and a silicide layer; First and second signal lines connected to a pair of source / drain regions, a third signal line connected to a second gate electrode, and a storage electrode formed below the storage electrode of the DRAM capacitor; A conductive connection member for connecting the third gate electrode.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4602635-B2
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