| abstract |
(57) [Summary] (Corrected) [Solution] A chemically amplified positive resist material characterized by containing a compound having two or more functional groups represented by the following general formula (1) in the molecule. The chemically amplified positive resist material has excellent dry etching resistance, high sensitivity and high resolution, and process adaptability, and has an improved reduction in pattern film thickness after development with an alkaline aqueous solution. According to the present invention, in forming a contact hole pattern, in a step of further reducing the contact hole size called thermal flow for heat treatment, two or more functional groups capable of crosslinking with a polymer compound are included in the molecule. By adding the compound, it is possible to easily control the heat miniaturization and provide a process that is highly adaptable, and because of its excellent pattern profile, it is possible to form a fine contact hole pattern especially for VLSI manufacturing. I do. |