| abstract |
(57) Abstract: In a method of manufacturing a semiconductor device using a semiconductor layer containing Si and C as an active region, a surface portion of an ion implantation layer in the semiconductor layer is removed without causing new damage. Provide a means to do so. SOLUTION: Impurity ions are implanted into a SiC substrate 11 in multiple stages to form an implanted layer 12 in which a plurality of impurity concentration peaks are formed. Thereafter, while heating the SiC substrate 11 in the chamber, an etching gas such as a hydrogen gas is flown to perform annealing, and at the same time, the upper injection layer 12b of the injection layer 12 is removed, leaving the lower injection layer 12a. This lower injection layer 12a Of the surface of the substrate can be easily controlled to an impurity concentration suitable for forming a Schottky electrode or an ohmic electrode, and by removing the upper injection layer 12b having many defects, the surface area of the substrate can be reduced. Crystallinity also improves. |