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filingDate 2001-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca8b716184d6b4ac26f5a90f47ee9104
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publicationDate 2001-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001330628-A
titleOfInvention Method for manufacturing semiconductor device
abstract (57) [Summary] [Object] To provide a connection device having a contact terminal capable of contacting an inspection object at multiple points and high density, and a method of manufacturing the same. A hole for forming a contact terminal 103 is formed by anisotropic etching of a silicon wafer, and the contact terminal 103, an insulating film 104 made of a polyimide film, and a lead-out wiring are formed by using the mold. 105 To form Further, the insulating film 104 and the wiring board 1 07, the buffer layer 108 and the silicon wafer serving as the substrate 109 are sandwiched and integrated to remove the mold. After that, the lead-out wiring 105 is connected to the electrode 110 a of the wiring board 107 with the solder 111.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-200448132-Y1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111095823-B
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008185596-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010249841-A
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priorityDate 1994-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 33.